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Wetting Layer: The Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin

Identifieur interne : 000228 ( Main/Repository ); précédent : 000227; suivant : 000229

Wetting Layer: The Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin

Auteurs : RBID : Pascal:13-0370752

Descripteurs français

Pascal (Inist)
- Mouillage, Mouillabilité, Traitement par plasma, Silicium, Synthèse nanomatériau, Solidification dirigée, Nanofil, Nanomatériau, Méthode VLS, Tension superficielle, Indium, Mécanisme croissance, Haute énergie, Gouttelette, Adatome, Epitaxie jet moléculaire, Substrat métal, 6808B, 8116, 8107V, 8107B.

English descriptors

KwdEn :
- Adatoms, Directional solidification, Droplets, Growth mechanism, High energy, Indium, Molecular beam epitaxy, Nanomaterial synthesis, Nanostructured materials, Nanowires, Plasma assisted processing, Silicon, Surface tension, VLS growth, Wettability, Wetting.

Abstract

Unidirectional growth of silicon nanowires (SiNWs) can be achieved via a vapor-liquid-solid (VLS) mechanism. Interestingly, when adopting low surface tension metals such as tin or indium to mediate the growth of SiNWs in a plasma-assisted VLS process, the standard scenario is challenged by the fact that low surface tension metals tend to coat the high energy sidewalls of SiNWs. Moreover, we show that tin-assisted SiNW growth can continue without any apparent metal droplet on top. To address these issues, we investigate the time evolution of tin-assisted SiNW growth. We suggest that, during the initial growth phase, an ultrathin metal layer wetting the SiNW sidewalls allows silicon adatoms to diffuse toward the top of the nanowires, and thus enhances the axial growth while suppressing the radial one (in a way similar to molecular beam epitaxy growth of SiNWs). Later on, the wetting layer can assist the growth even when the tin droplets are exhausted from the top of SiNWs. We propose that this phenomenon may hold for all low surface tension metal mediated VLS growth of SiNWs and could be helpful to tailor them for specific device applications.

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Pascal:13-0370752

Le document en format XML

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<author><name sortKey="Misra, Soumyadeep" uniqKey="Misra S">Soumyadeep Misra</name>
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<author><name>LINWEI YU</name>
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<author><name>WANGHUA CHEN</name>
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<author><name sortKey="Roca I Cabarrocas, Pere" uniqKey="Roca I Cabarrocas P">Pere Roca I Cabarrocas</name>
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<title level="j" type="abbreviated">J. phys. chem., C</title>
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<term>Growth mechanism</term>
<term>High energy</term>
<term>Indium</term>
<term>Molecular beam epitaxy</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Plasma assisted processing</term>
<term>Silicon</term>
<term>Surface tension</term>
<term>VLS growth</term>
<term>Wettability</term>
<term>Wetting</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Mouillage</term>
<term>Mouillabilité</term>
<term>Traitement par plasma</term>
<term>Silicium</term>
<term>Synthèse nanomatériau</term>
<term>Solidification dirigée</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Méthode VLS</term>
<term>Tension superficielle</term>
<term>Indium</term>
<term>Mécanisme croissance</term>
<term>Haute énergie</term>
<term>Gouttelette</term>
<term>Adatome</term>
<term>Epitaxie jet moléculaire</term>
<term>Substrat métal</term>
<term>6808B</term>
<term>8116</term>
<term>8107V</term>
<term>8107B</term>
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<front><div type="abstract" xml:lang="en">Unidirectional growth of silicon nanowires (SiNWs) can be achieved via a vapor-liquid-solid (VLS) mechanism. Interestingly, when adopting low surface tension metals such as tin or indium to mediate the growth of SiNWs in a plasma-assisted VLS process, the standard scenario is challenged by the fact that low surface tension metals tend to coat the high energy sidewalls of SiNWs. Moreover, we show that tin-assisted SiNW growth can continue without any apparent metal droplet on top. To address these issues, we investigate the time evolution of tin-assisted SiNW growth. We suggest that, during the initial growth phase, an ultrathin metal layer wetting the SiNW sidewalls allows silicon adatoms to diffuse toward the top of the nanowires, and thus enhances the axial growth while suppressing the radial one (in a way similar to molecular beam epitaxy growth of SiNWs). Later on, the wetting layer can assist the growth even when the tin droplets are exhausted from the top of SiNWs. We propose that this phenomenon may hold for all low surface tension metal mediated VLS growth of SiNWs and could be helpful to tailor them for specific device applications.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Wetting Layer: The Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin</s1>
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<fA11 i1="01" i2="1"><s1>MISRA (Soumyadeep)</s1>
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<fA11 i1="02" i2="1"><s1>LINWEI YU</s1>
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<fA11 i1="03" i2="1"><s1>WANGHUA CHEN</s1>
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<fA11 i1="04" i2="1"><s1>ROCA I CABARROCAS (Pere)</s1>
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<fA14 i1="01"><s1>LPICM, Ecole Polytechnique, CNRS</s1>
<s2>91128 Palaiseau</s2>
<s3>FRA</s3>
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<fC01 i1="01" l="ENG"><s0>Unidirectional growth of silicon nanowires (SiNWs) can be achieved via a vapor-liquid-solid (VLS) mechanism. Interestingly, when adopting low surface tension metals such as tin or indium to mediate the growth of SiNWs in a plasma-assisted VLS process, the standard scenario is challenged by the fact that low surface tension metals tend to coat the high energy sidewalls of SiNWs. Moreover, we show that tin-assisted SiNW growth can continue without any apparent metal droplet on top. To address these issues, we investigate the time evolution of tin-assisted SiNW growth. We suggest that, during the initial growth phase, an ultrathin metal layer wetting the SiNW sidewalls allows silicon adatoms to diffuse toward the top of the nanowires, and thus enhances the axial growth while suppressing the radial one (in a way similar to molecular beam epitaxy growth of SiNWs). Later on, the wetting layer can assist the growth even when the tin droplets are exhausted from the top of SiNWs. We propose that this phenomenon may hold for all low surface tension metal mediated VLS growth of SiNWs and could be helpful to tailor them for specific device applications.</s0>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s2>NC</s2>
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<s5>14</s5>
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<s5>29</s5>
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<s5>29</s5>
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<s4>INC</s4>
<s5>71</s5>
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<s4>INC</s4>
<s5>72</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>74</s5>
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<fN21><s1>350</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
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<fN82><s1>OTO</s1>
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Wetting Layer: The Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin

Wetting Layer: The Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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